The MMBF170-7-F MOSFET is a versatile and reliable component. It combines high current handling capabilities with low on-resistance, presenting an efficient solution for power management in a wide array of electronic devices. With its N-channel transistor polarity and enhancement transistor type, it is well-adapted to applications that demand precise control over current flow. The 10V voltage Vgs Rds on measurement guarantees accurate performance across different operating conditions, and the SOT - 23 case style facilitates easy integration into various circuit layouts.
Optimized for high-speed and low-voltage operations, it delivers excellent performance in analog and digital signal switching. Moreover, as a field-effect transistor designed for low-power applications, the MMBF170-7-F chip features a low threshold voltage and high input impedance, making it a prime choice for use in amplifiers and voltage - controlled circuits. Its small size and high reliability make it a common pick in portable electronic devices and sensor applications. Trust the MMBF170-7-F MOSFET for people's upcoming electronics projects.
Diodes Incorporated MMBF170-7-F's Features
- N-Channel MOSFET
- 60V Operation
- 0.5A Current Handling
- Tape and Reel Packaging
Diodes Incorporated MMBF170-7-F's Applications
- Switching Applications
- Soliton Protection
- Fault Tolerant Circuits
Diodes Incorporated MMBF170-7-F's Attributes
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 200 mA | Rds On - Drain-Source Resistance | 5 Ohms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 300 mW | Channel Mode | Enhancement |
| Series | MMBF170 | Brand | Diodes Incorporated |
| Configuration | Single | Forward Transconductance - Min | 80 mS |
| Height | 1 mm | Length | 2.9 mm |
| Product | MOSFET Small Signals | Product Type | MOSFET |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | Enhancement Mode Field Effect Transistor |
| Typical Turn-Off Delay Time | 10 ns | Typical Turn-On Delay Time | 10 ns |
| Width | 1.3 mm | Unit Weight |
0.000282 oz
|
Diodes Incorporated MMBF170-7-F's Category-FETs, MOSFETs
Metal - Oxide - Semiconductor Field - Effect Transistors (MOSFETs for short) are a type of semiconductor commonly used in both digital and analog circuits, and they are also useful power devices. As an original compact transistor, MOSFETs are suitable for a wide range of electrical applications.
It has long been widely believed that many technological advancements in the 21st century would not have been possible without MOSFETs. MOSFETs are more widely used than Bipolar Junction Transistors (BJTs) because they require very little control current for the load current. The conductivity of an enhancement-mode MOSFET can be increased in the "normally off" state. The voltage applied through the gate can minimize the conductivity in the "normally on" state. The miniaturization process of MOSFETs is relatively simple, and they can be effectively reduced in size for compact applications.
Other advantages of MOSFETs include fast switching (especially for digital signals), minimum power consumption, and high-density capacitance, which make it an ideal choice for large-scale integration.
MOSFETs are the core components of integrated circuits. Thanks to their miniaturization, they can be designed and manufactured in a single chip. The MOSFETs on an integrated circuit chip are four - terminal elements, namely the source (S), the gate (G), the drain (D), and the body (B). The body is usually connected to the source, enabling the MOSFET to function as a field-effect transistor. There are mainly two types of transistors. One is the Bipolar Junction Transistor (BJT), and the other is the Field - Effect Transistor (FET). MOSFETs belong to the field-effect transistor type. BJTs are usually used for currents below 1 ampere; MOSFETs are typically used for applications with larger currents.
There are two types of MOSFETs: depletion - mode and enhancement - mode. The depletion-mode MOSFET works like a closed switch. A positive voltage generates an operating current, and a negative voltage stops the operating current. The enhancement mode MOSFET is a type commonly used in modern applications. As mentioned before, a MOSFET is a device used to switch or amplify electrical signals. These can be achieved by changing the conductivity, which can be changed by varying the applied voltage.
MOSFETs are the most commonly used transistors in digital circuits and can achieve million-level integration in memory chips or microprocessors. In addition, MOSFET transistors are commonly used as switches in voltage-controlled circuits. It is believed that the emergence of MOSFETs has contributed to the development of a series of technological devices, such as pocket calculators and digital wristwatches.
Manufacturer of MMBF170LT1G - Diodes Incorporated
ONsemi is driving energy-efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy-efficient power and signal management, logic, discrete, and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power supply applications. onsemi operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices, and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Media Contact
Company Name: SIC Electronics Limited
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Phone: +86-0755-83501315
Country: China
Website: https://www.sic-components.com/
